Semiempirical tight binding modeling of electronic band structure of III-V nitride heterostructures

Gurel H. H., Akinci O., Ünlü H.

28th International Conference on the Physics of Semiconductors (ICPS-28), Vienna, Austria, 24 - 28 July 2006, vol.893, pp.171-172 identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 893
  • City: Vienna
  • Country: Austria
  • Page Numbers: pp.171-172
  • Istanbul Technical University Affiliated: Yes


In this work, we discuss the composition and strain effects on the electronic band structure modeling of III-V nitrides heterostructures using the second nearest neighbor sp(3)S* semi-empirical tight binding theory. The model Hamiltonian includes the second nearest neighbor (2nn) interactions, the spin-orbit splitting and the nonlinear variations of the atomic energy levels and the bond length with ternary mole fraction. There is an excellent agreement between the model predictions and experiment for the principal band gaps at Gamma, L and X symmetry points of Brillouin zone for AlN, GaN, InN and GaAs binaries and AlGaN, InGaN and GaAsN ternaries. The model predicts that the composition effects on the valence band offsets is small and linear but the conduction band offsets is nonlinear function of composition and large for large strain due to large deformation potential.