Analog dv/dt and di/dt Controlled Gate Driver With Self-Triggered Hold-at-Zero Algorithm for High-Power IGBTs


Tanrverdi O., Yıldırım D.

IEEE Transactions on Power Electronics, vol.39, no.1, pp.1184-1194, 2024 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 39 Issue: 1
  • Publication Date: 2024
  • Doi Number: 10.1109/tpel.2023.3316260
  • Journal Name: IEEE Transactions on Power Electronics
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Aerospace Database, Business Source Elite, Business Source Premier, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Page Numbers: pp.1184-1194
  • Keywords: Active gate drive, gate current, insulated-gate bipolar transistors (IGBTs), turn- ON and turn- OFF energy
  • Istanbul Technical University Affiliated: Yes

Abstract

Since each insulated-gate bipolar transistor (IGBT) module has a unique characteristic switching form, the turn-on and turn-off periods can be adjusted to suit certain usages. Gate resistors are employed for the conventional gate drivers (CGDs) to modify the turn-on and turn-off periods, which alter switching losses that significantly increase total losses. Both the collector-current rate of change ($di_{C}/dt$) and the collector-emitter rate of change ($dv_{\text{CE}}/dt$) influence the operating parameters in high-power converters. In this article, active $dv_{\text{CE}}/dt$ and $di_{C}/dt$ controlled IGBT gate driver with high-speed analog feedback circuits is given. Contrary to CGDs, the proposed active gate drive allows constant $di_{C}/dt$ while decreasing $dv_{\text{CE}}/dt$ to increase the efficiency of the power conversion system. Without affecting the electromagnetic interference, IGBT voltage, and current stresses, which are related to $di_{C}/dt$. Also, unlike other gate drivers, the effect of $di_{C}/dt$ to $dv_{\text{CE}}/dt$ at turn-on is eliminated with a completely analog designed self-triggered hold-at-zero circuit without the need for any digital unit. Hardware prototype is created to experimentally test the proposed active gate drive concept. A novel package next high power density dual family MBM450FS33F Hitachi dual IGBT with 3300 V 450 A ratings is used for the tests.