Akademik Veri Yönetim Sistemi
IEEE Transactions on Power Electronics, cilt.39, sa.1, ss.1184-1194, 2024 (SCI-Expanded)
Since each insulated-gate bipolar transistor (IGBT) module has a unique characteristic switching form, the turn-on and turn-off periods can be adjusted to suit certain usages. Gate resistors are employed for the conventional gate drivers (CGDs) to modify the turn-on and turn-off periods, which alter switching losses that significantly increase total losses. Both the collector-current rate of change ($di_{C}/dt$) and the collector-emitter rate of change ($dv_{\text{CE}}/dt$) influence the operating parameters in high-power converters. In this article, active $dv_{\text{CE}}/dt$ and $di_{C}/dt$ controlled IGBT gate driver with high-speed analog feedback circuits is given. Contrary to CGDs, the proposed active gate drive allows constant $di_{C}/dt$ while decreasing $dv_{\text{CE}}/dt$ to increase the efficiency of the power conversion system. Without affecting the electromagnetic interference, IGBT voltage, and current stresses, which are related to $di_{C}/dt$. Also, unlike other gate drivers, the effect of $di_{C}/dt$ to $dv_{\text{CE}}/dt$ at turn-on is eliminated with a completely analog designed self-triggered hold-at-zero circuit without the need for any digital unit. Hardware prototype is created to experimentally test the proposed active gate drive concept. A novel package next high power density dual family MBM450FS33F Hitachi dual IGBT with 3300 V 450 A ratings is used for the tests.