Solution-processed nanocomposite dielectrics for low voltage operated OFETs


Faraji S., Hashimoto T., Turner M. L., Majewski L. A.

Organic Electronics, vol.17, pp.178-183, 2015 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 17
  • Publication Date: 2015
  • Doi Number: 10.1016/j.orgel.2014.12.010
  • Journal Name: Organic Electronics
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.178-183
  • Keywords: Bilayer dielectric, Low voltage OFETs, Organic-inorganic nanocomposite, Printed electronics, Solution-processed high-k nanocomposite dielectric
  • Istanbul Technical University Affiliated: No

Abstract

A novel, solution processed high-k nanocomposite/low-k polymer bilayer gate dielectric that enables the fabrication of organic field-effect transistors (OFETs) that operate effectively at 1 V in high yields is reported. Barium strontium titanate (BST) and barium zirconate (BZ) nanoparticles are dispersed in a poly (vinylidene fluoride-co-hexafluoropropylene) P(VDF-HFP) polymer matrix to form a high-k nanocomposite layer. This is capped with a thin layer (ca 30 nm) of cross-linked poly(vinyl phenol) (PVP) to improve the surface roughness and dielectric-semiconductor interface and reduces the leakage current by at least one order of magnitude. OFETs were fabricated using solution-processed semiconductors, poly(3,6-di(2-thien-5-yl)-2,5-di(2-octyldodecyl)-pyrrolo[3,4-c]pyrrole-1,4-dione)thieno[3,2-b]thiophene) and a blend of 6,13-bis (triisopropylsilylethynyl) pentacene and poly (α-methylstyrene), in high yield (>90%) with negligible hysteresis and low leakage current density (10-9 A cm-2 at ±1).