Faceting of < 010 > steps on Si(001) and Ge(001) surfaces


Zandvliet H., Gurlu O., VAN GASTEL R., POELSEMA B.

PHYSICAL REVIEW B, vol.69, no.12, 2004 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 69 Issue: 12
  • Publication Date: 2004
  • Doi Number: 10.1103/physrevb.69.125311
  • Journal Name: PHYSICAL REVIEW B
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Istanbul Technical University Affiliated: No

Abstract

We have used scanning tunneling microscopy to study the faceting of <010> oriented steps on Si(001) and Ge(001) surfaces. The <010> oriented steps on Si(001) tend to facet into local S-A and S-B step segments, whereas <010> oriented steps on Ge(001) meander along the mean <010> direction. We show that the step faceting behavior of the Si and Ge(001) surfaces is fully governed by the next-nearest-neighbor (NNN) interaction between the substrate dimers. Only in the case of a repulsive NNN interaction, as for Si(001), faceting occurs.