Modeling of Total Ionizing Dose Degradation on 180-nm n-MOSFETs Using BSIM3

İlik S. , Kabaoglu A., Solmaz N. S. , Yelten M. B.

IEEE TRANSACTIONS ON ELECTRON DEVICES, cilt.66, ss.4617-4622, 2019 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 66 Konu: 11
  • Basım Tarihi: 2019
  • Doi Numarası: 10.1109/ted.2019.2926931
  • Sayfa Sayıları: ss.4617-4622


This paper presents a modeling approach to simulate the impact of total ionizing dose (TID) degradation on low-power analog and mixed-signal circuits. The modeling approach has been performed on 180-nm n-type metal-oxide-semiconductor field-effect transistors (n-MOSFETs). The effects of the finger number, channel geometry, and biasing voltages have been tested during irradiation experiments. All Berkeley short-channel insulated gate field-effect transistor model (BSIM) parameters relevant to the transistor properties affected by TID have been modified in an algorithmic flow to correctly estimate the sub-threshold leakage current for a given dose level. The maximum error of the model developed is below 8 %. A case study considering a five-stage ring oscillator is simulated with the generated model to show that the power consumption of the circuit increases and the oscillation frequency decreases around by 14 %.