Thermal design and performance evaluation of GaN power stage in a 4-level totem-pole PFC

Goksu O. F., Bulut E. B., Gülbahçe M. O., Dusmez S.

AEU - International Journal of Electronics and Communications, vol.173, 2024 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 173
  • Publication Date: 2024
  • Doi Number: 10.1016/j.aeue.2023.154981
  • Journal Name: AEU - International Journal of Electronics and Communications
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Applied Science & Technology Source, Compendex, Computer & Applied Sciences, INSPEC
  • Keywords: Finite-element-analysis, Gallium-nitride, Multi-level converter, Power factor correction, Thermal simulation, Totem-pole
  • Istanbul Technical University Affiliated: Yes


Low voltage Gallium Nitride (GaN) power devices are enabling the development of single-phase multi-level power factor correction (PFC) converters for high power density designs due to their superior figure-of-merit. However, despite their lower power losses compared to Si MOSFETs, it is still challenging to remove a few watts of power loss from small packages, which presents a barrier for using GaN in high power converters. To address this issue, this study establishes a 3-D thermal model for chip-scale package GaN devices, and analyses various heat sinking methods for a power stage of a single-phase 4-level PFC structure using the finite element method. The thermal performances of GaN devices with different layouts, board types, and thermal via patterns have been analyzed and verified experimentally on a power stage of a 4-level GaN PFC rated for 3.7 kW, where each of the six GaN devices dissipates 2.3 W.