Schottky barrier diode parameters of Ag/MgPc/p-Si structure

Canlca M., COŞKUN M., Altındal A., Nyokong T.

Journal of Porphyrins and Phthalocyanines, vol.16, no.7-8, pp.855-860, 2012 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 16 Issue: 7-8
  • Publication Date: 2012
  • Doi Number: 10.1142/s1088424612500824
  • Journal Name: Journal of Porphyrins and Phthalocyanines
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.855-860
  • Keywords: ball type MgPc, fixed oxide charge, interface trap, MIS structure, nonperiferally position
  • Istanbul Technical University Affiliated: Yes


An Ag/Pc/p-Si Schottky barrier (SB) diode was fabricated. The current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G-V) measurements were carried out to determine the characteristic parameters such as barrier height, ideality factor and series resistance of the SB diode. The non-linear behavior of ln (I) vs. ln (V) and ln (I/V) vs. V1/2 plots indicated that the thermoionic emission theory can be applied to evaluate junction parameters for the investigated SB diode rather than space-charge limited conduction (SCLC) mechanism and bulk-limited PooleFrenkel emission. The bulk doping concentration NB and fixed oxide charges Nf was determined from the measured high frequency C-V curve and was found to be 9.5 × 1014 cm-3 and 2.3 × 1013 cm-2, respectively. The values of barrier height obtained from Norde's function were compared with those from the forward bias current-voltage characteristic, and it was seen that there was a good agreement between barrier heights from both methods. Copyright © 2012 World Scientific Publishing Company.