0.1 - 10 GHz 0.5W high efficiency single transistor GaAs pHEMT power amplifier design using load-pull simulations 0.1 - 10 GHz 0.5W yüksek veri̇mli̇ tek transi̇stö rlü GaAs pHEMT güç kuvvetlendi̇ri̇ci̇si̇nl̇ n yük taramasi yöntemi̇ kullanilarak tasarimi

Sayginer M., Yazgı M., Kuntman H.

2011 IEEE 19th Signal Processing and Communications Applications Conference, SIU 2011, Antalya, Turkey, 20 - 22 April 2011, pp.841-844 identifier

  • Publication Type: Conference Paper / Full Text
  • Doi Number: 10.1109/siu.2011.5929783
  • City: Antalya
  • Country: Turkey
  • Page Numbers: pp.841-844
  • Istanbul Technical University Affiliated: Yes

Abstract

In this study, a linear single transistor power amplifier with 0.1 - 10 GHz, 0.5W output power at 1dB compression point (P1dB) and >45% power added efficiency (PAE) is designed. By using a graphical load-pull approach to obtain uniform distrubution for both P1dB and PAE, it is showed that the designed amplifier has its advantage over a classical load line mathched amplifier. UMS 900mW/mm 0.25μm GaAs pHEMT technology and ADS design environment is used to fullfill overall design and simulations. © 2011 IEEE.