Statistical MOSFET Modeling Methodology for Cryogenic Conditions


KABAOĞLU A., Solmaz N. S. , İlik S. , UZUN Y., Yelten M. B.

IEEE TRANSACTIONS ON ELECTRON DEVICES, cilt.66, ss.66-72, 2019 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 66 Konu: 1
  • Basım Tarihi: 2019
  • Doi Numarası: 10.1109/ted.2018.2877942
  • Dergi Adı: IEEE TRANSACTIONS ON ELECTRON DEVICES
  • Sayfa Sayıları: ss.66-72

Özet

Conventional transistor models are unable to capture the electrical behavior of transistors at cryogenic temperatures. In this paper, a methodology has been developed to calibrate temperature dependence parameters of Berkeley Short-Channel Insulated Gate Field Effect Transistor Model (BSIM3). Rather than modifying BSIM3 equations, the algorithm only changes the values of relevant parameters through noniterative, analytic operations; therefore, it can be implemented in typical circuit simulation tools. Proposed methodology allows to estimate I-D-V-GS and I-D-V-DS curves of the transistors having different channel lengths and widths even under various operating voltages, including the body bias. The parameter extraction algorithm runs with a reasonable computation cost and can compute parameter sets for transistors at user-defined cryogenic conditions.