Statistical MOSFET Modeling Methodology for Cryogenic Conditions

KABAOĞLU A., Solmaz N. S. , İlik S. , UZUN Y., Yelten M. B.

IEEE TRANSACTIONS ON ELECTRON DEVICES, vol.66, no.1, pp.66-72, 2019 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 66 Issue: 1
  • Publication Date: 2019
  • Doi Number: 10.1109/ted.2018.2877942
  • Page Numbers: pp.66-72
  • Keywords: BSIM modeling, cryogenic variation, cryogenic, device modeling, low temperature, MOSFET modeling, statistical modeling, TEMPERATURE, MOBILITY


Conventional transistor models are unable to capture the electrical behavior of transistors at cryogenic temperatures. In this paper, a methodology has been developed to calibrate temperature dependence parameters of Berkeley Short-Channel Insulated Gate Field Effect Transistor Model (BSIM3). Rather than modifying BSIM3 equations, the algorithm only changes the values of relevant parameters through noniterative, analytic operations; therefore, it can be implemented in typical circuit simulation tools. Proposed methodology allows to estimate I-D-V-GS and I-D-V-DS curves of the transistors having different channel lengths and widths even under various operating voltages, including the body bias. The parameter extraction algorithm runs with a reasonable computation cost and can compute parameter sets for transistors at user-defined cryogenic conditions.