Design of a Curvature-Corrected Bandgap Reference with 7.5ppm/C Temperature Coefficient in 0.35 mu m CMOS Process


Basyurt P. B. , Aksin D. Y.

IEEE International Symposium on Circuits and Systems, Seoul, South Korea, 20 - 23 May 2012 identifier

  • Publication Type: Conference Paper / Full Text
  • City: Seoul
  • Country: South Korea

Abstract

This paper presents the design of high-precision curvature-corrected bandgap voltage reference circuit realized in 0.35 mu m CMOS technology. The circuit generates an output voltage of 500mV with temperature coefficient of 7.5ppm/C over a temperature range of -30C to 120C, with a power supply rejection ratio of 58dB at 100Hz, and an rms output noise of 5.33 mu V integrated from 0.1Hz to 10Hz. The circuit operates down to 1.8 volts with a line sensitivity of 0.12%/V. The design consumes 9.74 mu A of supply current, and occupies an area of 0.075mm(2).