In order to develop alternative buffer layers for YBCO coated conductors, RE2O3 (RE=La, Pr, Sm, Eu, Gd, Tb, Ho, Yb, and Lu) thin films were studied as candidate materials. Buffer layers were grown on Ni tapes using organometallic compounds that are 2,4-pentanedionates, isopropoxides, and acetates by continuous, non-vacuum, soi-gel process. Films were annealed at 900 degreesC-1200 degreesC under 4%H-2-Ar gas mixture. The buffer layers were characterized by means of ESEM, SEM, EDS, XRD and pole figure analysis. Textured, pinhole free crack free, continuous buffer layers were obtained by using 2,4-pentanedionates.