Single-Electron-Precise Tailoring of a Resistive-Switching Device by Tuning Transfer Printing Parameters: A Computational Study

Turfanda A., Ünlü H.

IEEE Transactions on Electron Devices, 2023 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Publication Date: 2023
  • Doi Number: 10.1109/ted.2023.3305332
  • Journal Name: IEEE Transactions on Electron Devices
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Applied Science & Technology Source, Business Source Elite, Business Source Premier, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex, Civil Engineering Abstracts
  • Keywords: Atomic measurements, Density functional theory (DFT), Discrete Fourier transforms, Electrodes, Gold, Junctions, Metals, molecular electronics, resistive switching, single-electron box, Slabs, transfer printing (TP)
  • Istanbul Technical University Affiliated: Yes


We simulated and modeled a molecular junction to propose a conductive filament (CF) free resistive-switching based memory device. In transfer printing (TP)-based molecular electronic junctions, there might be metal islands ruptured from the transfer printed metal contact during the applied high pressure and temperature. We aim to show a relation among the displacement of these metal islands from the top metal electrode, the pressure applied, and the size of the island using a semi-classical approach. We model the molecules in these devices as a liquid with static and optical permittivity to understand the effect of the self-assembled molecules in the noble metal islands. A metal atom, which represents the metal island, is charged in varying environmental conditions using density functional theory. We found that the number of ruptured metal atoms increases with the increase in pressure. We show a sweep speed-dependent resistive switching. Single-electron-based device works without filament formation, and it has robust and inert metal top contacts.