IMPLEMENTATION OF A NOVEL BJT MODEL INTO THE SPICE SIMULATION PROGRAM TO OBTAIN EXTENDED ACCURACY


TEKDEMIR E., KUNTMAN H.

INTERNATIONAL JOURNAL OF ELECTRONICS, vol.75, no.6, pp.1185-1199, 1993 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 75 Issue: 6
  • Publication Date: 1993
  • Doi Number: 10.1080/00207219308907194
  • Title of Journal : INTERNATIONAL JOURNAL OF ELECTRONICS
  • Page Numbers: pp.1185-1199

Abstract

The purpose of this paper is to describe the implementation of a novel BJT model into the SPICE program. Because of the accuracy of static behaviour representation of the BJT, including physical representation of the forward and inverse Early effects, improved modelling of beta(F)-I(C) and beta(R)-I(E) dependences and incorporation of additional effects such as avalanche multiplication and leakage resistance of the collector-base junction, implementation of the new model into SPICE provides the possibility of choosing one of the two BJT models with different accuracy levels, similar to the MOS model levels in the SPICE program.