Near-Infrared Resonant Cavity Enhanced Silicon Microsphere Photodetector


Murib M. S. , Yuce E., Gurlu O. , Serpenguzel A.

Conference on Photonic Materials, Devices and Applications III, Dresden, Germany, 4 - 06 May 2009, vol.7366 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 7366
  • Doi Number: 10.1117/12.821198
  • City: Dresden
  • Country: Germany

Abstract

Elastic scattering intensity calculations at 90 degrees and 0 degrees for the transverse electric and transverse magnetic polarized light were performed at 1200nm for a 50 mu m radius and 3.5 refractive index silicon microsphere. The mode spacing between morphology dependent resonances was found to be 1.76 nm. The linewidth of the morphology dependent resonances was observed to be 0.02 nm, which leads to a quality factor on the order of 10(4).