Structural and Photovoltaic Properties of a-Si (SNc)/c-Si Heterojunction Fabricated by EBPVD Technique

Demiroglu D., Tatar B., Kazmanli K., Urgen M.

3rd International Congress on Advances in Applied Physics and Materials Science, Antalya, Turkey, 24 - 28 April 2013, vol.1569, pp.154-157 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 1569
  • Doi Number: 10.1063/1.4849248
  • City: Antalya
  • Country: Turkey
  • Page Numbers: pp.154-157
  • Istanbul Technical University Affiliated: Yes


In last two decades sculptured thin films are very attractive for researches. Some properties of these thin films, like high porosity correspondingly high large surface area, controlled morphology; bring into prominence on them. Sculptural thin films have wide application areas as electronics, optics, mechanics, magnetic and chemistry. Slanted nano-columnar (SnC) thin films are a type of sculptured thin films. In this investigation SnC thin films were growth on n-type crystalline Si(100) and p-type crystalline Si(111) via ultra-high vacuum electron beam evaporation technique. The structural and morphological properties of the amorphous silicon thin films were investigated by XRD, Raman and FE-SEM analysis. According to the XRD and Raman analysis the structure of thin film was amorphous and FE-SEM analysis indicated slanted nano-columns were formed smoothly. Slanted nano-columns a-Si/c-Si heterojunction were prepared as using a photovoltaic device. In this regard we were researched photovoltaic properties of these heterojunction with current-voltage characterization under dark and illumination conditions. Electrical parameters were determined from the current-voltage characteristic in the dark conditions zero-bias barrier height Phi(B0) =0.83 - 1.00 eV; diode ideality factor eta =11.71 - 10.73; series resistance R-s =260 - 31.1 1 k Omega and shunt resistance R-sh, =25.71 - 63.5 M Omega SnC a-Si/n-Si and SnC a-Si/p-Si heterojunctions shows a pretty good photovoltaic behavior about 10(3) - 103 times. The obtained photovoltaic parameters are such as short circuit current density J(sc) 83-40 mA/m(3), open circuit voltage V-oc 900-831 mV.