A High Linearity Low Power 130 nm CMOS LNA for Medical Ultrasound Imaging

Suna A., Özoğuz İ. S.

26th IEEE International Conference on Electronics, Circuits and Systems (ICECS), Genoa, Italy, 27 - 29 November 2019, pp.687-690 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume:
  • Doi Number: 10.1109/icecs46596.2019.8965090
  • City: Genoa
  • Country: Italy
  • Page Numbers: pp.687-690
  • Istanbul Technical University Affiliated: Yes


In this paper, a front-end high linearity low-noise-amplifier (LNA) has been introduced for high frequency ultrasound imaging. The design has been accomplished through UMC 130 nm complementary metal oxide semiconductor (CMOS) technology. Apart from noise and distortion cancellation of the common gate (CG) stage, "derivative superposition" (DS) method has been adapted to the proposed design. As a result of this, third order intermodulation product suppression has been achieved, and linearity performance of the overall design has been significantly improved. At 37 degrees C, the proposed ultrasound balun LNA accomplishes a voltage gain of greater than 19 dB between 0.3 MHz to 80 MHz, a third order input intercept point (IIP3) value of -4.5 dB, a noise figure (NF) value of 4.9 dB, and a power dissipation value of 189.9 mu W. The proposed design simultaneously achieved low power and high third order linearity.