Influence of structural changes on electrical properties of Al:ZnO films

Creative Commons License

Ürper O., Baydoğan N.

MATERIALS LETTERS, vol.258, 2020 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 258
  • Publication Date: 2020
  • Doi Number: 10.1016/j.matlet.2019.126641
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Chimica, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Istanbul Technical University Affiliated: Yes


This paper presents a study of Al-doped ZnO films deposited at room temperature by a cost-effective solgel dip-coating technique. The influence of Al concentration on crystallinity, electrical and optical properties of films annealed in nitrogen and oxygen atmosphere has been studied. The resistivity has been decreased from 1.1-1.6 x 10(-4) to 0.73-0.93 x 10(-4) with the increase of Al concentration from 0,8 to 1,2 at. %, respectively. Transmission spectrum displays that optical transmittance has been displayed between 85% and 90% by increasing Al concentration. (C) 2019 Elsevier B.V. All rights reserved.