Influence of structural changes on electrical properties of Al:ZnO films


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Ürper O., Baydoğan N.

MATERIALS LETTERS, cilt.258, 2020 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 258
  • Basım Tarihi: 2020
  • Doi Numarası: 10.1016/j.matlet.2019.126641
  • Dergi Adı: MATERIALS LETTERS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Chimica, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • İstanbul Teknik Üniversitesi Adresli: Evet

Özet

This paper presents a study of Al-doped ZnO films deposited at room temperature by a cost-effective solgel dip-coating technique. The influence of Al concentration on crystallinity, electrical and optical properties of films annealed in nitrogen and oxygen atmosphere has been studied. The resistivity has been decreased from 1.1-1.6 x 10(-4) Omega.cm to 0.73-0.93 x 10(-4) Omega.cm with the increase of Al concentration from 0,8 to 1,2 at. %, respectively. Transmission spectrum displays that optical transmittance has been displayed between 85% and 90% by increasing Al concentration. (C) 2019 Elsevier B.V. All rights reserved.