12th International Conference on Optimization of Electrical and Electronic Equipment, Brasov, Romanya, 20 - 21 Mayıs 2010, ss.949-950
In this paper a Class-A power amplifier design is described that comprises of a single transistor using artificial transmission lines. The amplifier's structure can be considered as a conventional travelling wave amplifier comprising only one transistor referred to here as a single-stage travelling wave amplifier (SSTWA). The SSTWA structure using 0.35 mu m SiGe process is demonstrated to provide medium power output and power-added efficiency results making the device suitable for numerous power applications in wireless microwave systems.