Synthesis, Contact Printing, and Device Characterization of Ni-Catalyzed, Crystalline InAs Nanowires

Ford A. C., Ho J. C., Fan Z., Ergen O., Altoe V., Aloni S., ...More

NANO RESEARCH, vol.1, no.1, pp.32-39, 2008 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 1 Issue: 1
  • Publication Date: 2008
  • Doi Number: 10.1007/s12274-008-8009-4
  • Journal Name: NANO RESEARCH
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Agricultural & Environmental Science Database, Biotechnology Research Abstracts, Compendex, INSPEC, Metadex
  • Page Numbers: pp.32-39
  • Istanbul Technical University Affiliated: No

Abstract

InAs nanowires have been actively explored as the channel material for high performance transistors owing to their high electron mobility and ease of ohmic metal contact formation. The catalytic growth of nonepitaxial InAs nanowires, however, has often relied on the use of Au colloids which is non-CMOS compatible. Here, we demonstrate the successful synthesis of crystalline InAs nanowires with high yield and tunable diameters by using Ni nanoparticles as the catalyst material on amorphous SiO2 substrates. The nanowires show superb electrical properties with field-effect electron mobility similar to 2700 cm(2)/Vs and I-ON/I-OFF > 10(3). The uniformity and purity of the grown InAs nanowires are further demonstrated by large-scale assembly of parallel arrays of nanowires on substrates via the contact printing process that enables high performance, "printable" transistors, capable of delivering 5-10 mA ON currents (similar to 400 nanowires).