A Weibull distribution-based new approach to represent hot carrier degradation in threshold voltage of MOS transistors

Kuntman A., Ardali A., Kuntman H., Kacar F.

SOLID-STATE ELECTRONICS, vol.48, no.2, pp.217-223, 2004 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 48 Issue: 2
  • Publication Date: 2004
  • Doi Number: 10.1016/j.sse.2003.07.001
  • Journal Name: SOLID-STATE ELECTRONICS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.217-223
  • Istanbul Technical University Affiliated: No

Abstract

The importance of long term reliability in MOS VLSI circuits is becoming an important subject because of the increasing densities of VLSI chips. Hot carrier effects cause noncatastrophic failures which develop gradually over time and change the circuit performance.