A Weibull distribution-based new approach to represent hot carrier degradation in threshold voltage of MOS transistors


Kuntman A., Ardali A., Kuntman H., Kacar F.

SOLID-STATE ELECTRONICS, vol.48, no.2, pp.217-223, 2004 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 48 Issue: 2
  • Publication Date: 2004
  • Doi Number: 10.1016/j.sse.2003.07.001
  • Title of Journal : SOLID-STATE ELECTRONICS
  • Page Numbers: pp.217-223

Abstract

The importance of long term reliability in MOS VLSI circuits is becoming an important subject because of the increasing densities of VLSI chips. Hot carrier effects cause noncatastrophic failures which develop gradually over time and change the circuit performance.