A Weibull distribution-based new approach to represent hot carrier degradation in threshold voltage of MOS transistors

Kuntman, A; Ardali, A; Kuntman, H; Kacar, F

doi:10.1016/j.sse.2003.07.001

A Weibull distribution-based new approach to represent hot carrier degradation in threshold voltage of MOS transistors

Atıf İçin Kopyala

Kuntman A., Ardali A., Kuntman H., Kacar F.

SOLID-STATE ELECTRONICS, cilt.48, sa.2, ss.217-223, 2004 (SCI-Expanded)

Yayın Türü: Makale / Tam Makale
Cilt numarası: 48 Sayı: 2
Basım Tarihi: 2004
Doi Numarası: 10.1016/j.sse.2003.07.001
Dergi Adı: SOLID-STATE ELECTRONICS
Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Sayfa Sayıları: ss.217-223
İstanbul Teknik Üniversitesi Adresli: Hayır

Özet

The importance of long term reliability in MOS VLSI circuits is becoming an important subject because of the increasing densities of VLSI chips. Hot carrier effects cause noncatastrophic failures which develop gradually over time and change the circuit performance.