A Novel Architecture for Photovoltaic Devices: Field-effect Solar Cells Using Screening-engineered Nanoelectrodes for Silicon and Earth Abundant Cuprous Oxide


Vazquez-Mena O., Regan W., Byrnes S., Ergen O. , Gannett W., Wang F., ...More

39th IEEE Photovoltaic Specialists Conference (PVSC), Tama, Japan, 16 - 21 June 2013, pp.83-86 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume:
  • Doi Number: 10.1109/pvsc.2013.6745152
  • City: Tama
  • Country: Japan
  • Page Numbers: pp.83-86

Abstract

A field effect cuprous oxide solar cell device based on a gate that controls carrier concentration in semiconductors and using screening-engineered nanostructured electrodes is presented. The cell works in inversion mode, with a top gate that forms a depletion layer and a p-n junction, and with nanostructured electrodes that collect the photocurrent across the junction. This device does not require any doping process or a heterojunction, opening a novel route for materials that are difficult to dope. As a proof of principle, we present experimental results of a silicon field effect solar cell. To demonstrate the potential of this configuration for alternative materials, we present a field-effect solar cell made of earth abundant cuprous oxide, which has a favorable band gap but that is difficult to dope. We show the synthesis of the material, the effect of the gate on the carrier concentration and a photovoltaic power conversion efficiency of 0.2%.