Dielectric spectroscopy and nonequilibrium phase transitions in TlGaSe2 layered crystals


Salehli F. , BAKIS Y., SEYIDOV M. Y. , SULEYMANOV R. A.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol.22, no.8, pp.843-850, 2007 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 22 Issue: 8
  • Publication Date: 2007
  • Doi Number: 10.1088/0268-1242/22/8/002
  • Title of Journal : SEMICONDUCTOR SCIENCE AND TECHNOLOGY
  • Page Numbers: pp.843-850

Abstract

The real and imaginary parts of the dielectric function of T1GaSe(2) single crystals are investigated in the frequency range 30 Hz-13 MHz and at temperatures 80 K-300 K. A low frequency dispersion due to the interfacial polarization within the crystals is observed. The temperature dependence of relaxation time is obtained in a wide temperature region. A well-distinguished anomalous rise of relaxation time has been established in the 145 K-190 K temperature range for the first time far from the traditional phase transitions known in T1GaSe(2) crystals. It is shown that the observed behaviour of relaxation time is due to instabilities in the electronic subsystem revealing themselves as a non-equilibrium phase transition. A close relationship between the observed anomaly and anomalous behaviour of the various physical parameters of the investigated crystals is proposed.