Growth and Characterization of Stoichiometric Cu2ZnSnS4 Crystal Using Vertical Bridgman Technique

Peksu E., Terlemezoglu M., PARLAK M., Karaağaç H.

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, cilt.219, sa.3, 2022 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 219 Sayı: 3
  • Basım Tarihi: 2022
  • Doi Numarası: 10.1002/pssa.202100595
  • Dergi Adı: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Chemical Abstracts Core, Compendex, INSPEC
  • Anahtar Kelimeler: conductivity, Cu2ZnSnS4, mobility, SOLAR-CELL, THIN-FILMS, PHASE-EQUILIBRIA
  • İstanbul Teknik Üniversitesi Adresli: Evet

Özet

Stoichiometric Cu2ZnSnS4 (CZTS) single phase crystals are successfully grown in a single-zone vertical furnace by Bridgman technique. X-ray diffraction (XRD) and Raman spectroscopy measurements are employed to investigate the structural properties of the grown crystals, which verifies the formation of mono-phase CZTS crystals with kesterite structure. The energy-dispersive X-ray analysis (EDS) indicates the growth of CZTS single phase crystals with a nearly stoichiometric chemical composition. The carrier concentration, mobility, and resistivity of the crystals are determined from Hall Effect measurements. At room temperature, the respective values are found to be 4.0 x 10(15) cm(-3), 1.0 cm(2) Vs(-1), and 1540 omega cm. The activation energies for the acceptor levels are also determined using the temperature-dependent hole concentration measurement. Cu-Zn-antisite originated acceptor level with activation energies of approximate to 121 meV is identified in a nearly stoichiometric kesterite structure.