An X-band SiGe low-noise amplifier with high gain and low noise figure


Basyurt P. B. , Tarim N.

3rd IEEE International Symposium on Control, Communications and Signal Processing (ISCCSP 2008), St Julians, Malta, 12 - 14 March 2008, pp.1103-1106 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Doi Number: 10.1109/isccsp.2008.4537389
  • City: St Julians
  • Country: Malta
  • Page Numbers: pp.1103-1106

Abstract

This paper presents the design of a low-noise amplifier (LNA) with high gain and low noise figure (NF), targeting the X-band, in 0.25 mu m SiGe RiCMOS process provided by IHP. Simulation results show that at 10 GHz, the proposed LNA has a noise figure of 2.295 dB, with both input and output impedances matched to 50 Omega, an input return loss of -30.22 dB, an output return loss of -17.02 dB, and a voltage gain of 20.74 dB while dissipating 7.5 mW power from a 2.5 V power supply. The circuit occupies a chip area of 590 x 765 mu m(2).