An X-band SiGe low-noise amplifier with high gain and low noise figure

Basyurt P. B., Tarim N.

3rd IEEE International Symposium on Control, Communications and Signal Processing (ISCCSP 2008), St Julians, Malta, 12 - 14 Mart 2008, ss.1103-1106 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Doi Numarası: 10.1109/isccsp.2008.4537389
  • Basıldığı Şehir: St Julians
  • Basıldığı Ülke: Malta
  • Sayfa Sayıları: ss.1103-1106
  • İstanbul Teknik Üniversitesi Adresli: Evet

Özet

This paper presents the design of a low-noise amplifier (LNA) with high gain and low noise figure (NF), targeting the X-band, in 0.25 mu m SiGe RiCMOS process provided by IHP. Simulation results show that at 10 GHz, the proposed LNA has a noise figure of 2.295 dB, with both input and output impedances matched to 50 Omega, an input return loss of -30.22 dB, an output return loss of -17.02 dB, and a voltage gain of 20.74 dB while dissipating 7.5 mW power from a 2.5 V power supply. The circuit occupies a chip area of 590 x 765 mu m(2).