Deposition and characterization of layer-by-layer sputtered AgGaSe2 thin films

Karaagac H., PARLAK M.

APPLIED SURFACE SCIENCE, vol.257, no.13, pp.5731-5738, 2011 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 257 Issue: 13
  • Publication Date: 2011
  • Doi Number: 10.1016/j.apsusc.2011.01.087
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.5731-5738
  • Istanbul Technical University Affiliated: No


Sputtering technique has been used for the deposition of AgGaSe2 thin films onto soda-lime glass substrates using sequential layer-by-layer deposition of GaSe and Ag thin films. The analysis of energy dispersive analysis of X-ray (EDXA) indicated a Ga-rich composition for as-grown samples and there was a pronounce effect of post-annealing on chemical composition of AgGaSe2 thin film. X-ray diffraction (XRD) measurements revealed that Ag metallic phase exists in the amorphous AgGaSe2 structure up to annealing temperature 450 degrees C and then the structure turned to the single phase AgGaSe2 with the preferred orientation along (1 1 2) direction with the annealing temperature at 600 degrees C. The surface morphology of the samples was analyzed by scanning electron microscopy (SEM) measurements. The structural parameters related to chalcopyrite compounds have been calculated. Optical properties of AgGaSe2 thin films were studied by carrying out transmittance and reflectance measurements in the wavelength range of 325-1100nm at room temperature. The absorption coefficient and the band gap values for as-grown and annealed samples were evaluated as 1.55 and 1.77 eV, respectively. The crystal-field and spin-orbit splitting levels were resolved. These levels (2.03 and 2.30 eV) were also detected from the photoresponse measurements almost at the same energy values. As a result of the temperature dependent resistivity and mobility measurements in the temperature range of 100-430 K, it was found that the decrease in mobility and the increase in carrier concentration following to the increasing annealing temperature attributed to the structural defects (tetragonal distortion, vacancies and interstitials). (C) 2011 Elsevier B. V. All rights reserved.