Anisotropic magnetoresistive model for saturated sensor elements


Haji-Sheikh M., MORALES G., Altuncevahir B. , KOYMEN A.

IEEE SENSORS JOURNAL, vol.5, no.6, pp.1258-1263, 2005 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 5 Issue: 6
  • Publication Date: 2005
  • Doi Number: 10.1109/jsen.2005.857879
  • Title of Journal : IEEE SENSORS JOURNAL
  • Page Numbers: pp.1258-1263

Abstract

Presented is a model that predicts the resistive behavior of an anisotropic magnetoresistive (AMR) sensor element in magnetic saturation. Both the experimental data and the model concur with a high degree of accuracy. The model builds on the work of other investigators and it is shown to track the behavior of actual magnetoresistive elements. This paper shows that, with a minor modification to previous models, the resistor should and can be divided into isotropic and magnetically affected components that can give some new insights into the AMR effect. With this model, one can extract the parameters that have magnetic effects from the ones that are independent of the magnetic effects.