Automated Matching Network Modeling and Optimization for Power Amplifier Designs

Creative Commons License

Kouhalvandi L., Ceylan O., Özoğuz İ. S.

11th International Conference on Electrical and Electronics Engineering, ELECO 2019, Bursa, Türkiye, 28 - 30 Kasım 2019, ss.510-513 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Doi Numarası: 10.23919/eleco47770.2019.8990407
  • Basıldığı Şehir: Bursa
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayıları: ss.510-513
  • Anahtar Kelimeler: Automated, Gallium Nitride (GaN) high-electron mobility transistor (HEMT), matching network, modeling, optimization, power amplifier, RF designs, Smith Chart, RF
  • İstanbul Teknik Üniversitesi Adresli: Evet

Özet

© 2019 Chamber of Turkish Electrical Engineers.This study describes a design automation methodology and technique for designing an optimized high power amplifier (PA). The proposed method optimizes the matching networks by deriving the suitable matching components and automatically evaluating their performances with nonlinear simulations. The design process starts with a simple cell and then the number of cells is extended and component values are iterated automatically until power amplifier's aimed specifications are met. To evaluate and verify the proposed method, a GaN HEMT amplifier is designed from 1.7 GHz to 2.3 GHz revealing a power of around 40 dBm, power added efficiency (PAE) of 42 %-77 %, and power gain of larger than 14 dB. Upon comparison of the results, it is revealed that the proposed automated method provides a solution to the problem of the computational effort, accuracy, and efficiency of high power amplifier designs.