Decade bandwidth single and cascaded travelling wave medium power amplifiers using SiGe HBTs

Sayginer M., Yazgı M., Toker A., Kuntman H., Virdee B. S.

2011 20th European Conference on Circuit Theory and Design, ECCTD 2011, Linköping, Sweden, 29 - 31 August 2011, pp.821-824 identifier

  • Publication Type: Conference Paper / Full Text
  • Doi Number: 10.1109/ecctd.2011.6043833
  • City: Linköping
  • Country: Sweden
  • Page Numbers: pp.821-824
  • Keywords: SiGe HBT, Wideband Power Amplifiers
  • Istanbul Technical University Affiliated: Yes


This paper presents two integrated class-A travelling wave medium power amplifiers employing 0.35μm SiGe HBT process. The first amplifier realized is a 1.3x1mm2 device comprising of a single-stage configuration using a single transistor that exhibits an average small-signal gain of 7dB and power level of 14dBm between 0.25 to 2.5GHz while maintaining power-added efficiency in the range 30% to 10%. The second amplifier is 1.8x2.3mm2 device comprising of a driver stage cascaded with two identical amplifier stages in a parallel configuration whose outputs are combined together to enhance the devices output power by 3dB across the wideband frequency range. This amplifier's unique topology is implemented using a version of the first amplifier. The amplifier's measured output power was approximately 18dBm, the average small-signal gain was 21dB, and efficiency between 30% to 10% across 0.2-2.2GHz. © 2011 IEEE.