A third generation solar cell based on wet-chemically etched Si nanowires and sol-gel derived Cu2ZnSnS4 thin films


Peksu E., Karaağaç H.

JOURNAL OF ALLOYS AND COMPOUNDS, vol.774, pp.1117-1122, 2019 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 774
  • Publication Date: 2019
  • Doi Number: 10.1016/j.jallcom.2018.10.012
  • Title of Journal : JOURNAL OF ALLOYS AND COMPOUNDS
  • Page Numbers: pp.1117-1122

Abstract

Monophase Cu2ZnSnS4 (CZTS) thin films have been succesfully deposited on both soda lime glass substrate and Si nanowire (NW) arrays by a simple and cost-effective production route based on a combination of sol-gel and spin-coating technique. X-ray diffraction and energy dispersive X-ray analysis studies have revealed that post-annealing process at 350 degrees C is a sufficient temperature for the growth of a stoichiometric mono-phase CZTS thin film. The band gap energy of the films was found to be 1.55 eV. Following the optimization of CZTS thin films, they were deposited on the Si-NWs as an absorber layer for the fabrication of n-Si-NWs/p-CZTS structured solar cell. From the recorded I-V characteristics of the constructed solar cells under standard condition (A.M 15G), the power conversion efficiency was found to be 1.0 +/- 0.1%. (C) 2018 Elsevier B.V. All rights reserved.