A 0.18 mu m CMOS X-BAND Low Noise Amplifier for Space Applications


Sahin N., Yelten M. B.

1st New Generation of CAS Conference (NGCAS ), Genoa, İtalya, 6 - 09 Eylül 2017, ss.205-208 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Doi Numarası: 10.1109/ngcas.2017.12
  • Basıldığı Şehir: Genoa
  • Basıldığı Ülke: İtalya
  • Sayfa Sayıları: ss.205-208
  • İstanbul Teknik Üniversitesi Adresli: Evet

Özet

A 7 GHz X-band low noise amplifier for space applications is designed using 0.18 mu m UMC CMOS Mixed-Mode/RF technology. The LNA is designed for being tested at temperatures below 100 K (also called cryogenic temperatures) and under radiation. Inductively degenerated cascode topology is used and an extra bias inductor has been added to improve input matching. Designed CMOS LNA achieves a voltage gain higher than 15 dB, noise figure of 2.6 dB, IIP3 of -2.4 dBm while consuming 25 mW of power.