A 0.18 mu m CMOS X-BAND Low Noise Amplifier for Space Applications

Sahin N., Yelten M. B.

1st New Generation of CAS Conference (NGCAS ), Genoa, Italy, 6 - 09 September 2017, pp.205-208 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Doi Number: 10.1109/ngcas.2017.12
  • City: Genoa
  • Country: Italy
  • Page Numbers: pp.205-208
  • Istanbul Technical University Affiliated: Yes

Abstract

A 7 GHz X-band low noise amplifier for space applications is designed using 0.18 mu m UMC CMOS Mixed-Mode/RF technology. The LNA is designed for being tested at temperatures below 100 K (also called cryogenic temperatures) and under radiation. Inductively degenerated cascode topology is used and an extra bias inductor has been added to improve input matching. Designed CMOS LNA achieves a voltage gain higher than 15 dB, noise figure of 2.6 dB, IIP3 of -2.4 dBm while consuming 25 mW of power.