Multi-quantum well design parameter variation in InP-based VCSEL


Kumarajah K., Menon P. S. , Ismail M., Yeop B. Y. , Shaari S.

8th WSEAS International Conference on Microelectronics, Nanoelectronics, Optoelectronics, İstanbul, Turkey, 30 May - 01 June 2009, pp.115-116 identifier

  • Publication Type: Conference Paper / Full Text
  • City: İstanbul
  • Country: Turkey
  • Page Numbers: pp.115-116

Abstract

We present the design parameter variations of multi quantum wells (MQW) in the active region of an InP-based vertical-cavity surface emitting laser (VCSEL) utilizing an air-post design, The MQW and barrier thickness were varied and their effect on the device threshold current, gain and lattice temperature were analysed and presented.