Investigation of the properties of Cr-doped CdZnS nanocrystals with the best IPCE (%) value

Şahin Ö., Horoz S.

JOURNAL OF THE AUSTRALIAN CERAMIC SOCIETY, vol.58, no.5, pp.1709-1714, 2022 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 58 Issue: 5
  • Publication Date: 2022
  • Doi Number: 10.1007/s41779-022-00805-3
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Communication Abstracts, Metadex, Civil Engineering Abstracts
  • Page Numbers: pp.1709-1714
  • Keywords: Characterization, Doping, Nanocrystals, Photovoltaic, Synthesis, PHOTOVOLTAIC PROPERTIES, CD1-XZNXS, ZNS
  • Istanbul Technical University Affiliated: Yes


Our current study consisted of two basic motivations. In our first motivation, Cr-doped CdZnS nanocrystals with different Cr concentrations were synthesized on TiO2/FTO (fluorine-doped tin oxide) substrates using the successive ionic layer adsorption and reaction (SILAR) technique. The nanocrystals here were used as a sensitizer for photovoltaic measurements. The main purpose of this motivation was to determine the optimum Cr concentration with maximum IPCE (%) by making incident photon to electron conversion efficiency (IPCE) measurements. It was observed that Cr concentration with a maximum IPCE (%) value at 400 nm was found as 0.75%. Moreover, the crystallite size and energy band gap of Cr-doped CdZnS nanocrystals were calculated as 2.53 nm and 3.83 eV, respectively, due to the Cr doping metal. Thus, the results showed that Cr-doped metal effectively altered the photovoltaic, crystallite size, and energy bandgap value of the CdZnS host semiconductor.