A broadband, differential transimpedance amplifier in 0.35 mu m SiGe BICMOS technology for 10 Gbit/s fiber optical front-ends


Akbey Y., Palatmutcuogullari O.

ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, cilt.74, ss.155-162, 2013 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 74 Konu: 1
  • Basım Tarihi: 2013
  • Doi Numarası: 10.1007/s10470-012-9949-x
  • Dergi Adı: ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING
  • Sayfa Sayıları: ss.155-162

Özet

This study focuses on 10 Gbit/s differential transimpedance amplifier. At the beginning of the work, the amplifier circuit is deeply analyzed and is optimized for the best phase linearity over the bandwidth resulted in a group delay variation less than 1 ps. The amplifier circuit is designed with 0.35 mu m SiGe heterojunction bipolar transistor BICMOS process. 9 GHz bandwidth, almost 58 dB Omega transimpedance gain with less than 11.18 pA/ averaged input-referred noise current are achieved. Electrical sensitivity is 15 mu A(pp). Power consumption is 71 mW at 3.3 V single power supply.