A broadband, differential transimpedance amplifier in 0.35 mu m SiGe BICMOS technology for 10 Gbit/s fiber optical front-ends

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Atıf İçin Kopyala

Akbey Y., Palatmutcuogullari O.

ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, cilt.74, sa.1, ss.155-162, 2013 (SCI-Expanded)

• Yayın Türü: Makale / Tam Makale
• Cilt numarası: 74 Sayı: 1
• Basım Tarihi: 2013
• Doi Numarası: 10.1007/s10470-012-9949-x
• Dergi Adı: ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING
• Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
• Sayfa Sayıları: ss.155-162
• İstanbul Teknik Üniversitesi Adresli: Evet

Özet

This study focuses on 10 Gbit/s differential transimpedance amplifier. At the beginning of the work, the amplifier circuit is deeply analyzed and is optimized for the best phase linearity over the bandwidth resulted in a group delay variation less than 1 ps. The amplifier circuit is designed with 0.35 mu m SiGe heterojunction bipolar transistor BICMOS process. 9 GHz bandwidth, almost 58 dB Omega transimpedance gain with less than 11.18 pA/ averaged input-referred noise current are achieved. Electrical sensitivity is 15 mu A(pp). Power consumption is 71 mW at 3.3 V single power supply.