Structural and Dielectric Properties of Ba1-xLax(Zn1/3Nb2/3)O-3 Solid Solutions

Qasrawi A. F., Sahin E. I., Abed T. Y., EMEK M.

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, vol.258, no.3, 2021 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 258 Issue: 3
  • Publication Date: 2021
  • Doi Number: 10.1002/pssb.202000419
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Keywords: Ba1−xLax(Zn1/3Nb2/3)O3, dielectric ceramics, dielectric relaxation, X-ray diffraction
  • Istanbul Technical University Affiliated: Yes


Herein, lanthanum doping effects on the structural, dielectric, and electrical properties of Ba1-xLax(Zn1/3Nb2/3)O-3 (BZN) solid solutions are focused upon. The La contents which are varied in the range of 0.02-0.20 exhibit a solubility limit of x = 0.02. Although minor phases of Ba5Nb4O15 and Ba3LaNb3O12 appear for samples doped with La contents of x = 0.05 and x = 0.10, they play no remarkable role for the enhanced structural and dielectric properties of BZN. The La doping content of x = 0.02 succeeds in increasing the crystallite size by 51.16% and lowering the microstrain by 34.18% and defect concentration by 63.10%. La-doped BZN ceramics display higher values of relative density and electrical conductivity. The analyses of the dielectric spectra as a function of temperature display dielectric relaxation behavior above 120 degrees C. In the temperature range of 20-120 degrees C, La doping changes the temperature coefficient of dielectric constants from +30 ppm degrees C-1 in pure samples to -341 ppm degrees C-1 in samples doped with La contents of x = 0.10. The enhancements in structural parameters, density values, and dielectric responses that are achieved via La doping make BZN ceramics more suitable for electronic device fabrication.