Nano-Crossbar based Computing: Lessons Learned and Future Directions


Altun M. , Çevik İ. , Erten A., Eksik O. , Stan M., Moritz C. A.

Design, Automation and Test in Europe Conference and Exhibition (DATE), Grenoble, France, 9 - 13 March 2020, pp.382-387 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume:
  • Doi Number: 10.23919/date48585.2020.9116566
  • City: Grenoble
  • Country: France
  • Page Numbers: pp.382-387

Abstract

In this paper, we first summarize our research activities done through our European Union's Horizon-2020 project between 2015 and 2019. The project has a goal of developing synthesis and performance optimization techniques for nanocrossbar arrays. For this purpose, different computing models including diode, memristor, FET, and four-terminal switch based models, within different technologies including carbon nanotubes, nanowires, and memristors as well as the CMOS technology have been investigated. Their capabilities to realize logic functions and to tolerate faults have been deeply analyzed. From these experiences, we think that instead of replacing CMOS with a completely new crossbar based technology, developing CMOS compatible crossbar technologies and computing models is a more viable solution to overcome challenges in CMOS miniaturization. At this point, four-terminal switch based arrays, called switching lattices, come forward with their CMOS compatibility feature as well as with their area efficient device and circuit realizations. We have showed that switching lattices can be efficiently implemented using a standard CMOS process to implement logic functions by doing experiments in a 65nm CMOS process. Further in this paper, we make an introduction of realizing memory arrays with switching lattices including ROMs and RAMs. Also we discuss challenges and promises in realizing switching lattices for under 30nm CMOS technologies including FinFET technologies.