IMPROVED REPRESENTATION OF CHANNEL-LENGTH MODULATION IN JUNCTION FIELD-EFFECT TRANSISTORS

KUNTMAN H.

INTERNATIONAL JOURNAL OF ELECTRONICS, vol.75, no.1, pp.57-64, 1993 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 75 Issue: 1
  • Publication Date: 1993
  • Doi Number: 10.1080/00207219308907087
  • Journal Name: INTERNATIONAL JOURNAL OF ELECTRONICS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.57-64
  • Istanbul Technical University Affiliated: No

Abstract

An improved expression to represent the channel-length modulation in JFET devices is proposed. The accuracy of the derived equation is proved by comparing the theoretical results with the results obtained from measurements and the standard SPICE JFET model, respectively. The precision of proposed channel-length modulation term is demonstrated on a simple test circuit by comparing the simulated and experimental harmonic distortion properties. Simulated and experimental plots of the total harmonic distortion against V(DS) are found to be in good agreement, while conventional SPICE simulation results significantly differ from actual behaviour at low values of V(DS).