Characterization of CuIn0.7Ga0.3Se2 Thin Films Deposited by Single Stage Thermal Evaporation Process

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Karaağaç H., Peksu E., Behzad H., Akgoz S., Parlak M.

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 14 NO 5, vol.14, no.12, pp.1700145-1700152, 2017 (SCI-Expanded)

  • Publication Type: Article / Article
  • Volume: 14 Issue: 12
  • Publication Date: 2017
  • Journal Name: PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 14 NO 5
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Communication Abstracts, Compendex, Metadex, Civil Engineering Abstracts
  • Page Numbers: pp.1700145-1700152
  • Istanbul Technical University Affiliated: Yes

Abstract

Single phase CuIn0.7Ga0.3Se2 (CIGS) thin films are successfully deposited on
glass substrates via a single stage thermal evaporation from a stoichiometric
powder of CIGS. X-ray photoelectron spectroscopy measurements reveal the
existence of Cu- and Ga-rich surface of the as-grown CIGS thin films. The
post-growth annealing process lead to migration of the metallic atoms from
the surface region into the bulk during the crystallization process, which
subsequently causes a significant reduction in the reflection and a change in
the mechanism of conduction. From the photoconductivity measurements it
was deduced that the deposited CIGS films demonstrated a drastic decrease
in resistivity under different illumination intensities. The post-growth annealing
effect on the morphology and structure of CIGS thin films is investigated
by means of the atomic force microscopy and X-ray diffraction measurements,
respectively. Results show that there is a significant change in surface
roughness as well as in degree of crystallinity of the films following the
annealing process at different temperatures.