RETARDATION OF NUCLEATION RATE FOR GRAIN-SIZE ENHANCEMENT BY DEEP SILICON ION-IMPLANTATION OF LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED AMORPHOUS-SILICON FILMS

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WU I., CHIANG A., FUSE M., OVECOGLU L., HUANG T.

JOURNAL OF APPLIED PHYSICS, vol.65, no.10, pp.4036-4039, 1989 (SCI-Expanded)

• Publication Type: Article / Article
• Volume: 65 Issue: 10
• Publication Date: 1989
• Doi Number: 10.1063/1.343327
• Journal Name: JOURNAL OF APPLIED PHYSICS
• Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
• Page Numbers: pp.4036-4039
• Istanbul Technical University Affiliated: No