RETARDATION OF NUCLEATION RATE FOR GRAIN-SIZE ENHANCEMENT BY DEEP SILICON ION-IMPLANTATION OF LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED AMORPHOUS-SILICON FILMS


WU I., CHIANG A., FUSE M., OVECOGLU L. , HUANG T.

JOURNAL OF APPLIED PHYSICS, cilt.65, ss.4036-4039, 1989 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 65 Konu: 10
  • Basım Tarihi: 1989
  • Doi Numarası: 10.1063/1.343327
  • Dergi Adı: JOURNAL OF APPLIED PHYSICS
  • Sayfa Sayıları: ss.4036-4039