RETARDATION OF NUCLEATION RATE FOR GRAIN-SIZE ENHANCEMENT BY DEEP SILICON ION-IMPLANTATION OF LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED AMORPHOUS-SILICON FILMS


WU I., CHIANG A., FUSE M., OVECOGLU L. , HUANG T.

JOURNAL OF APPLIED PHYSICS, vol.65, no.10, pp.4036-4039, 1989 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 65 Issue: 10
  • Publication Date: 1989
  • Doi Number: 10.1063/1.343327
  • Title of Journal : JOURNAL OF APPLIED PHYSICS
  • Page Numbers: pp.4036-4039