A.c. and d.c. conduction processes in octakis[(4-tert-butylbenzylthio)-porphyrazinato]Cu(II) thin films with gold electrodes

KESKİN B., ALTINDAL A., Avciata U., Gül A.

BULLETIN OF MATERIALS SCIENCE, vol.37, no.3, pp.461-468, 2014 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 37 Issue: 3
  • Publication Date: 2014
  • Doi Number: 10.1007/s12034-014-0691-0
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.461-468
  • Istanbul Technical University Affiliated: Yes


The d.c. and a.c. electrical transport properties of Au/Pz/Au devices with various thickness of Pz(octakis[(4-tert-butylbenzylthio)-porphyrazinato]Cu(II)) layer have been investigated. Measurements revealed that, in contrast to previously investigated Au/Pc/Au structures, low voltage d.c. behaviour of the films can be described by the field-lowering mechanisms with a log(J) infinity V-1/2 current density-voltage characteristics under forward and reverse bias. For high reverse voltages, the observed ln(J/V-2) - 1/V characteristics indicated that the origin of conduction mechanism is Fowler-Nordheim tunnelling (FNT). On the other hand, the voltage dependence of current density at the higher forward-voltage region indicates that the mechanism of conduction in Au/Pz/Au devices is space charge limited conduction dominated by exponential trap distribution. A thickness independent barrier height was observed for tunnelling, while the total trap concentration show a general tendency to decrease with increasing film thickness. The a.c. conductivity showed two regions in the ln(sigma(a.c.)) - ln(f) plots having different slopes, leading to the conclusion that for low frequency region, the dominant conduction mechanism is a small polaron tunnelling at all temperatures, whereas for high frequency region, correlated barrier hopping model is the dominant mechanism in the investigated devices.