Low-loss active inductor with independently adjustable self-resonance frequency and quality factor parameters

Momen H. G., Yazgi M., Kopru R., Saatlo A. N.

Integration, the VLSI Journal, vol.58, pp.22-26, 2017 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 58
  • Publication Date: 2017
  • Doi Number: 10.1016/j.vlsi.2016.12.014
  • Journal Name: Integration, the VLSI Journal
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.22-26
  • Keywords: Active inductor, CMOS, Quality factor, Self-resonance frequency, Low-loss, SILICON, DESIGN
  • Istanbul Technical University Affiliated: Yes


© 2017 Elsevier B.V.This work presents a new low-loss active inductor whose self-resonance frequency and quality factor parameters can be adjusted independently from each other. In order to achieve this property, a new input topology has been employed which consists of cascode structure with a diode connected transistor. Furthermore, the proposed input topology makes the device robust in terms of its performance over variation in process, voltage and temperature. Additionally, RC feedback is used to cancel series-loss resistance of the active inductor, which allows self-resonant enhancement as well. Schematic and post-layout simulation results show the theoretical validity of the design. To validate the design feasibility for process, voltage and temperature changes, Monte Carlo and temperature analysis are done. Suggested structure shows inductor behavior in the frequency range of 0.3–11.3 GHz. Maximum quality factor is obtained as high as 2.1k at 5.9 GHz. Total power consumption is as low as 1 mW with 1.8 V power supply.