Design of 1.5-6 GHz High Efficiency 50W Power Amplifier Design for sub 6-GHz 5G Systems

Çaǧdas E., Kizilbey O., Yazgı M., Palamutçuoǧullari O.

30th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2023, İstanbul, Turkey, 4 - 07 December 2023 identifier

  • Publication Type: Conference Paper / Full Text
  • Doi Number: 10.1109/icecs58634.2023.10382945
  • City: İstanbul
  • Country: Turkey
  • Keywords: GaN (HEMT), wideband high power high efficiency power amplifier, Wilkinson power divider/combiner
  • Istanbul Technical University Affiliated: Yes


This paper presents the design of a Gallium Nitride (GaN) transistor based power amplifier (PA) with 50W (47 dBm) output power operating in the 1.5-6 GHz frequency range for 5G base stations. In this study, to avoid a gain-bandwidth trade-off by using a single 50W transistor, two 25W transistors are used and combined at the output. A wideband (1.5-6 GHz) 2-way Wilkinson power divider/combiner is designed to drive the 25W transistors by dividing the input power in half and combining the 25W power at the output. Cree CGHV1F025S model GaN transistor and Rogers RT5870 model substrate are used in the design. The performance of the designed 25W PA is evaluated by simulations. According to the simulation results, the 25W PA offers 9.5 dB power gain, 43.6 dBm output power and power added efficiency (PAE) between 42% and 55% in the 1.5-6 GHz band. By combining the output of two 25W PAs with the designed 2-way WPD, an output power of 46.3-47.1 dBm is obtained across the band.