Effect of annealing temperature on ZnO:Al/p-Si heterojunctions


Baydoğan N. , KARACASU O., Çimenoğlu H.

THIN SOLID FILMS, vol.520, no.17, pp.5790-5796, 2012 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 520 Issue: 17
  • Publication Date: 2012
  • Doi Number: 10.1016/j.tsf.2012.04.044
  • Title of Journal : THIN SOLID FILMS
  • Page Numbers: pp.5790-5796

Abstract

Al-doped, zinc oxide (ZnO:Al) films with a 1.2 at.% Al concentration were deposited on p-type silicon wafers using a sol-gel dip coating technique to produce a ZnO:Al/p-Si heterojunction. Following deposition and subsequent drying processes, the films were annealed in vacuum at five different temperatures between 550 and 900 degrees C for 1 h. The resistivity of the films decreased with increasing annealing temperature, and an annealing temperature of 700 degrees C provided controlled current flow through the ZnO:Al/p-Si heterojunction up to 20 V. The ZnO:Al film deposited on a p-type silicon wafer with 1.2 at.% Al concentration was concluded to have the potential for use in electronic devices as a diode after annealing at 700 degrees C. (C) 2012 Elsevier B.V. All rights reserved.