Effect of annealing temperature on ZnO:Al/p-Si heterojunctions


Baydoğan N., KARACASU O., Çimenoğlu H.

THIN SOLID FILMS, cilt.520, sa.17, ss.5790-5796, 2012 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 520 Sayı: 17
  • Basım Tarihi: 2012
  • Doi Numarası: 10.1016/j.tsf.2012.04.044
  • Dergi Adı: THIN SOLID FILMS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.5790-5796
  • Anahtar Kelimeler: Sol-gel deposition, Zinc oxide, Aluminium, Heterojunctions, Annealing, Electrical properties, PULSED-LASER DEPOSITION, RAY ATTENUATION COEFFICIENTS, ZINC-OXIDE FILMS, THIN-FILMS, ZNO FILMS, ELECTRICAL CHARACTERIZATION, OPTICAL-PROPERTIES, N HETEROJUNCTION, SPRAY-PYROLYSIS, BORATE GLASSES
  • İstanbul Teknik Üniversitesi Adresli: Evet

Özet

Al-doped, zinc oxide (ZnO:Al) films with a 1.2 at.% Al concentration were deposited on p-type silicon wafers using a sol-gel dip coating technique to produce a ZnO:Al/p-Si heterojunction. Following deposition and subsequent drying processes, the films were annealed in vacuum at five different temperatures between 550 and 900 degrees C for 1 h. The resistivity of the films decreased with increasing annealing temperature, and an annealing temperature of 700 degrees C provided controlled current flow through the ZnO:Al/p-Si heterojunction up to 20 V. The ZnO:Al film deposited on a p-type silicon wafer with 1.2 at.% Al concentration was concluded to have the potential for use in electronic devices as a diode after annealing at 700 degrees C. (C) 2012 Elsevier B.V. All rights reserved.