Thermal Modeling of 3-D Stacked DRAM Over SiGe HBT BiCMOS CPU

Clarke R., Jacob P., Erdogan O., Belemijian P., Raman S., Leroy M. R., ...Daha Fazla

IEEE ACCESS, cilt.3, ss.43-54, 2015 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 3
  • Basım Tarihi: 2015
  • Doi Numarası: 10.1109/access.2015.2396474
  • Dergi Adı: IEEE ACCESS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.43-54
  • İstanbul Teknik Üniversitesi Adresli: Evet

Özet

We have previously evaluated the feasibility of a serial code accelerator core with 3-D DRAM stacked on the core operating at high frequencies. While operating at such high frequencies (> 24 GHz), there are concerns with removing heat from the 3-D stack. We propose the use of thin diamond sheets, which have high thermal conductivity, as a heat spreader by bonding it close to the processor core substrate and memory stacks. We show, through thermal modeling using COMSOL finite-element analysis tools, the feasibility of diamond as an effective heat spreader in a processor-memory 3-D stack.