A new approach for the extraction of SPICE MOSFET level-3 static model parameters

Yazgı M., Kuntman H.

5th IEEE International Conference on Electronics, Circuits and Systems, ICECS 1998, Lisboa, Portugal, 7 - 10 September 1998, vol.1, pp.505-508 identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 1
  • Doi Number: 10.1109/icecs.1998.813372
  • City: Lisboa
  • Country: Portugal
  • Page Numbers: pp.505-508
  • Istanbul Technical University Affiliated: Yes


© 1998 IEEE.An iteration procedure obtained by using a new approach is presented for the extraction of SPICE Level-3 MOS Transistor static model parameters KP, VTH, θ, VMAX and RS(= RD). The procedure uses both gate and drain characteristics or one of these in the triode region of operation. As well as the triode region parameters, NFS and χ can be find in the overall procedure. Results of the procedure have been compared with the experimental results. It is obvious from this comparison that the new approach is effective for determination of Level-3 model parameters. In addition to that, it is possible to use this new approach for other models which can be represented by polinomial equations in which the parameters are coefficients as in eqn (2).