A new approach of hot-carrier degradation and lifetime prediction for N-MOS transistors

Kacar F., Kuntman A., Kuntman H.

13th IEEE Mediterranean Electrotechnical Conference (MELECON 2006), Benalmadena, Spain, 16 - 19 May 2006, pp.129-132 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Doi Number: 10.1109/melcon.2006.1653053
  • City: Benalmadena
  • Country: Spain
  • Page Numbers: pp.129-132
  • Istanbul Technical University Affiliated: Yes


In this paper the degradation in the drain current and threshold voltage of the N-MOS transistors are observed by operating the device under stress voltage conditions. Using the observation results the effect of hot-carriers was investigated statistically and a new statistical method for modeling was proposed to be an alternative to those given in the literature. The observed and the estimated values of the degradation are compared.