A new approach of hot-carrier degradation and lifetime prediction for N-MOS transistors

Kacar F., Kuntman A., Kuntman H.

13th IEEE Mediterranean Electrotechnical Conference (MELECON 2006), Benalmadena, İspanya, 16 - 19 Mayıs 2006, ss.129-132 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Doi Numarası: 10.1109/melcon.2006.1653053
  • Basıldığı Şehir: Benalmadena
  • Basıldığı Ülke: İspanya
  • Sayfa Sayıları: ss.129-132
  • İstanbul Teknik Üniversitesi Adresli: Evet

Özet

In this paper the degradation in the drain current and threshold voltage of the N-MOS transistors are observed by operating the device under stress voltage conditions. Using the observation results the effect of hot-carriers was investigated statistically and a new statistical method for modeling was proposed to be an alternative to those given in the literature. The observed and the estimated values of the degradation are compared.